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power management & multimarket data sheet rev. 1.3, 2013-11-27 final esd112-b1-02 series bi-directional ultra-low capacitanc e esd / transient protection diode ESD112-B1-02ELS esd112-b1-02el tvs diodes transient voltage suppressor diodes
esd112-b1-02 series final data sheet 2 rev. 1.3, 2013-11-27 trademarks of infineon technologies ag aurix?, bluemoon?, c166?, ca npak?, cipos?, cipurse?, comn eon?, econopack?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobri dge?, econodual?, econopim?, eicedriver?, eupec?, fcos?, hitfe t?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, primarion?, primepack?, primestack?, pro- sil?, profet?, rasic?, reve rsave?, satric?, sieget?, sindrion?, sipmos?, smarti?, smartlewis ?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?, x-go ld?, x-pmu?, xmm?, xposys?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by fl exray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrotec hnique internationale. ir da? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwa ve? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symb ian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-10-26 revision history: rev.1.2, 2013-06-10 page or item subjects (major changes since previous revision) rev. 1.3, 2013-11-27: final data sheet esd112-b1-02el status change to final
esd112-b1-02 series bi-directional ultra-low capacitan ce esd / transient protection diode final data sheet 3 rev. 1.3, 2013-11-27 1 bi-directional ultra-low capaci tance esd / transient protection diode 1.1 features ? esd / transient protection of rf signal lines according to: ? iec61000-4-2 (esd): 20 kv (air/contact) ? iec61000-4-4 (eft): 40 a (5/50 ns) ? iec61000-4-5 (surge): 3 a (8/20 s) ? maximum working voltage: v rwm 5.3 v ? extremely low capacitance: c l = 0.2 pf (typical) ? low clamping voltage: v cl = 29 v (typical) at i pp = 16 a ? very low reverse current i r < 1 na typ. ? very small form factor down to 0.62 x 0.32 x 0.31 mm 3 ? pb-free (rohs compliant) and halogen free package 1.2 application examples ? esd protection of sensitive rf signal lines , bluetooth class 2, automated meter reading ? rf antenna protection, frontend module, gps, mobile tv, fm radio, uwb 1.3 product description figure 1-1 pin configurati on and schematic diagram table 1-1 ordering information type package configuration marking code ESD112-B1-02ELS t sslp-2-4 1 line, bi-directional t esd112-b1-02el tslp-2-20 1 line, bi-directional te a) pin configuration pg-ts(s)lp-2_dual_diode_serie_pinconf_and_schematicdiag.vsd b) schematic diagram tslp-2 tsslp-2 pin 1 pin 2 pin 1 pin 2 pin 1 pin 2 pin 1 marking (lasered)
esd112-b1-02 series characteristics final data sheet 4 rev. 1.3, 2013-11-27 2 characteristics attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 electrical characteristics at t a =25c, unless otherwise specified figure 2-1 definitions of electrical characteristics table 2-1 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. esd air / contact discharge 1) 1) v esd according to iec61000-4-2 v esd -20 ? 20 kv peak pulse current ( t p = 8/20 s) 2) 2) i pp according to iec61000-4-5 i pp -3?3a operating temperature range t op -55 ? 125 c storage temperature t stg -65 ? 150 c

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esd112-b1-02 series characteristics final data sheet 5 rev. 1.3, 2013-11-27 table 2-2 dc characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. reverse working voltage v rwm ?5.3 ? 5.3 v breakdown voltage v br 7??v i r = 1 ma, from pin 1 to pin 2, from pin 2 to pin 1 reverse current i r ?<150na v r = 5.3 v table 2-3 rf characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. diode capacitance c l ? 0.23 0.4 pf v r = 0 v, f = 1 mhz ?0.20.4 v r = 0 v, f = 1 ghz series inductance l s ? 0.2 ? nh ESD112-B1-02ELS ? 0.4 ? esd112-b1-02el table 2-4 esd characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. clamping voltage 2) v cl ?29?v i tlp = 16 a ?44? i tlp = 30 a clamping voltage 1) 1) i pp according to iec61000-4-5 ( t p = 8/20 s) ?1117 i pp = 1 a ?1521 i pp = 3 a dynamic resistance 2) 2) please refer to application note an210 [4] . tlp parameter: z 0 = 50 , t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of tlp charactertistics between i tlp1 = 10 a and i tlp2 = 40 a. r dyn ?1? ?
esd112-b1-02 series characteristics final data sheet 6 rev. 1.3, 2013-11-27 2.2 typical characteristics at t a = 25 c, unless otherwise specified figure 2-2 reverse current: i r = f ( v r ), t a = parameter figure 2-3 line capacitance: c l = f ( v r ), f = 1 mhz 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 0 1 2 3 4 5 6 i r [a] v r [v] +25 c +85 c +125 c 0 0.1 0.2 0.3 0.4 0 1 2 3 4 5 6 c l [pf] v r [v]
esd112-b1-02 series characteristics final data sheet 7 rev. 1.3, 2013-11-27 figure 2-4 line capacitance: c l = f ( f ), v r = parameter figure 2-5 line capacitance: c l = f ( t a ), v r = parameter 0.2 0.21 0.22 0.23 0.24 0.25 0.26 0 500 1000 1500 2000 2500 3000 c l [pf] f [mhz] 0v 3.3v 5.3v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 c l [pf] t a [ c] 0v 3.3v 5.3v
esd112-b1-02 series characteristics final data sheet 8 rev. 1.3, 2013-11-27 figure 2-6 iec61000-4-2 v cl = f ( t ), 8 kv positiv pulse from pin 1 to pin 2 figure 2-7 iec61000-4-2 v cl = f ( t ), 8 kv negativ pulse from pin 1 to pin 2 -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 700 800 900 v cl [v] t p [ns] v cl-max-peak = 112 [v] v cl-30ns-peak = 24.8 [v] -120 -100 -80 -60 -40 -20 0 20 -100 0 100 200 300 400 500 600 700 800 900 v cl [v] t p [ns] v cl-max-peak = -116 [v] v cl-30ns-peak = -25.0 [v]
esd112-b1-02 series characteristics final data sheet 9 rev. 1.3, 2013-11-27 figure 2-8 iec61000-4-2 v cl = f ( t ), 15 kv positiv pulse from pin 1 to pin 2 figure 2-9 iec61000-4-2 v cl = f ( t ), 15 kv negativ pulse from pin 1 to pin 2 -20 0 20 40 60 80 100 120 140 160 180 -100 0 100 200 300 400 500 600 700 800 900 v cl [v] t p [ns] v cl-max-peak = 162 [v] v cl-30ns-peak = 37.4 [v] -180 -160 -140 -120 -100 -80 -60 -40 -20 0 20 -100 0 100 200 300 400 500 600 700 800 900 v cl [v] t p [ns] v cl-max-peak = -169 [v] v cl-30ns-peak = -37.6 [v]
esd112-b1-02 series characteristics final data sheet 10 rev. 1.3, 2013-11-27 figure 2-10 clamping voltage : i tlp = f ( v tlp ) [4] figure 2-11 clampine voltage: v cl = f ( i pp ), t p = 8/20 s 0 10 20 30 40 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 i tlp [a] equivalent v iec [kv] v tlp [v] ESD112-B1-02ELS r dyn r dyn =1.0 7 8 9 10 11 12 13 14 15 16 17 0 1 2 3 4 v cl [v] i pp [a]
esd112-b1-02 series application information final data sheet 11 rev. 1.3, 2013-11-27 3 application information figure 3-1 single line, bi-directional esd / transient protection [1] , [2] application_esd0p2rf -02xx.vsd esd sensitive device 1 2 connector protected signal line the protection diode should be placed very close to the location where the esd or other transients can occur to keep loops and inductances as small as possible . pin 2 (or pin 1) should be connected directly to a ground plane on the board . i/ o
esd112-b1-02 series package information final data sheet 12 rev. 1.3, 2013-11-27 4 package information 4.1 tsslp-2-4 (mm) [5] figure 4-1 tsslp-2-4 package overview figure 4-2 tsslp-2-4: footprint figure 4-3 tsslp-2-4: packing figure 4-4 tsslp-2-4: marking (example) tsslp-2-3, -4-po v01 0.05 0.32 1 2 0.035 0.2 1) 0.62 0.05 +0.01 0.31 -0.02 1) dimension applies to plated terminals cathode marking 1) 0.035 0.26 0.05 max. bottom view top view 0.355 0.27 0.19 0.19 0.19 copper solder mask stencil apertures 0.57 0.24 0.62 0.32 0.24 0.14 tsslp-2-3, -4-fp v02 g tsslp-2-3, -4-tp v03 deliveries can be both tape types (no selection possible). specification allows identical processing (pick & place) by users. ex ey punched tape tape type embossed tape 0.43 0.73 0.37 0.67 ex 4 ey 0.35 cathode marking 8
esd112-b1-02 series package information final data sheet 13 rev. 1.3, 2013-11-27 4.2 tslp-2-20 (mm) [5] figure 4-5 tslp-2-20: package overview figure 4-6 tslp-2-20: footprint figure 4-7 tslp-2-20: packing figure 4-8 tslp-2-20: marking (example) tslp-2-19, -20-po v01 0.05 0.6 1 2 0.05 0.65 0.035 0.25 1) 1 0.05 0.05 max. +0.01 0.31 -0.02 1) dimension applies to plated terminals cathode marking 1) 0.035 0.5 bottom view top view tslp-2-19, -20-fp v01 0.45 0.28 0.28 0.38 0.93 copper solder mask stencil aperture s 0.35 1 0.6 0.35 0.3 0.76 4 1.16 0.4 cathode marking 8 tslp-2-19, -20-tp v02 type code cathode marking tslp-2-19, -20-mk v01 12
esd112-b1-02 series references final data sheet 14 rev. 1.3, 2013-11-27 references [1] infineon ag - application note an167 : esd protection for broadband lna bga728l7 for portable and mobile tv applications [2] infineon ag - application note an178 : esd protection for rf antennas using infineon esd0p4rfl and esd0p2rf-xx [3] infineon ag - application note an200 : low cost fm radio lna using bfr340f for mobile phone applications [4] infineon ag - application note an210 : effective esd protection design at system level using vf-tlp characterization methodology [5] infineon ag - recommendations for pcb a ssembly of infineon tslp and tsslp packages
published by infineon technologies ag www.infineon.com

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